Semi-ICP-200 Plasma Etching Equipment
The ICP source device features a simple structure and is easy to adjust. By applying a bias voltage to the substrate stage, it is possible to precisely control the electron density and ion energy. Specifically, the RF coil generates the plasma, while the substrate bias voltage regulates the energy flux and beam current of ions bombarding the substrate, as well as the angle of incidence. The ICP operates as an electrode-less discharge, thus eliminating electrode contamination.
- Product Description
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The ICP source device features a simple structure and is easy to tune. By applying a bias voltage to the substrate stage, it is possible to precisely control the electron density and ion energy. Specifically, the RF coil generates the plasma, while the substrate bias voltage regulates the energy flux and beam current of ions bombarding the substrate, as well as the angle of incidence. The ICP operates as an electrode-less discharge, thus eliminating electrode contamination.
Widely used in semiconductor manufacturing, microelectromechanical systems, optoelectronic devices, flat-panel displays, nanotechnology research, and the communications field, among others.
Technical services
1) Repair, maintain, refurbish, and upgrade imported and domestically produced plasma etching machines;
2) Undertake the design and manufacturing of custom-made plasma etching machines;
3) Undertake the etching process commissioned for R&D.
Equipment Composition
The Semi-ICP-200 etching equipment consists of a vacuum chamber, an RF antenna, an ICP source, a bias power supply, a vacuum system, a gas delivery unit, a sample holder with temperature control, a chiller, a control system, and supporting accessories.
Main configuration
Vacuum chamber dimensions: φ300mm × 250mm;
Ultimate vacuum level better than: 5 × 10⁻⁵ Pa;
Working background vacuum: 8 × 10⁻⁴ Pa (approximately 40 minutes);
Effective etching diameter: φ200mm (8 inches);
Main RF power supply: frequency 13.56 MHz, power 3000 W;
Bias power supply: frequency 13.56 MHz, power 500 W;
Working gas: Configured according to process requirements.
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