Overall process system
The equipment features an overall cluster structure, comprising a photoelectric conversion thin-film deposition system, an MAMS electronic stripping system, a degassing and encapsulation system, a vacuum coating system for adsorbent materials, and a comprehensive degassing system. It enables fully automated, coordinated operation, while also allowing each subsystem to operate independently without interfering with one another. Interlocks can be configured between the systems. The equipment is manufactured from 316 material and is equipped with several flanged interfaces.
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Configuration and Metrics 1
Overall structure The equipment features an overall cluster structure, comprising a photoelectric conversion thin-film deposition system, an MAMS electronic stripping system, a degassing and encapsulation system, a vacuum coating system for sorbent materials, and a comprehensive degassing system. It enables fully automated, coordinated operation, while also allowing each subsystem to operate independently without interference. Interlocks can be configured between the systems. The equipment is fabricated from 316 material and is equipped with several flanged interfaces. 2
System control The equipment control system supports both standalone and networked operations and can be configured with a host computer to enable a 1-to-6 layout. The specific control logic features interlocking mechanisms, a clear and intuitive operator interface, and the ability to set process editing permissions. 3
Process flow Sample mounting—Sample transfer—Determine growth conditions (beam current, substrate temperature)—Deoxygenation—Stabilize substrate temperature—Beam source heating—Growth initiation—Growth control—Growth termination—Beam source temperature cooling—Substrate temperature cooling—Vacuum restoration—Sample removal—Wafer retrieval—Vacuum recovery. 4
In-situ detection system The standard light source supports control at 3100K or other color temperatures, and its intensity is adjustable, enabling the acquisition of illuminance data. The device features overall potential control ranging from 0 to 500V with an accuracy of 1/1000, and includes automatic short-circuit protection. The photocurrent is sampled in real time from 10 nA to 10 mA, with automatic range switching and an accuracy of 1/1000.
With leakage current slope triggering function.5
Heating source and power supply At least 3 positions for metal compounds + 1 position for a metallic single-element boat. The current controls the beam source rate, enabling an output range of 0–10 A with continuous adjustment. Overvoltage and overheating protection are provided. 6
Electronic stripping component The source of the stripping device generates a polarizing current ranging from 0 to 10 A, continuously adjustable with an adjustment accuracy of 0.001 A. The effective area control covers a maximum effective diameter of 35 mm. The energy accuracy is ±0.1% at a diameter of 35 mm. The intensity detection system includes an overload alarm. 7
Vacuum system The equipment employs a dual-vacuum system comprising a molecular pump unit and a cryogenic pump unit to meet the requirements of different processes. The operating vacuum level is ≤8×10⁻⁸ Torr. -7 pa, with pre-pump protection. 8
External baking system The external baking temperature is ≤500℃, and the baking time is 24 hours. All components of the equipment are designed to withstand this temperature for extended periods. The temperature range is from (RT)+80℃ to 500℃, with a display accuracy of 0.1℃, a temperature fluctuation of ±1.0℃, and a temperature uniformity of ±2.0%. The heating-up time from room temperature to 25～400℃ takes approximately 90 minutes.
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