PECVD Plasma-Enhanced Chemical Vapor Deposition Equipment
The PECVD plasma-enhanced chemical vapor deposition equipment is primarily used for depositing thin films of silicon nitride and silicon oxide in a clean, vacuum environment. Utilizing single-frequency or dual-frequency plasma-enhanced chemical vapor deposition technology, this equipment represents an ideal process for depositing high-quality thin films of silicon nitride, silicon oxide, and other materials.
- Product Description
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PECVD Plasma-Enhanced Chemical Vapor Deposition Equipment Primarily used for the growth of silicon nitride and silicon oxide thin films in a clean, vacuum environment; employing single-frequency or dual-frequency plasma-enhanced chemical vapor deposition technology, this equipment represents an ideal process for depositing high-quality silicon nitride, silicon oxide, and other thin films.
Dual-frequency technology employs a 13.56 MHz RF power supply and a 400 kHz intermediate-frequency power supply.
The RF power supply is used to control the plasma flux; the intermediate-frequency power supply is used to control the plasma energy.
Device Purpose and Functional Features
1. This equipment is a high-vacuum single-frequency or dual-frequency plasma-enhanced chemical vapor deposition (PECVD) thin-film deposition system, primarily used for the preparation of silicon nitride and silicon oxide thin films.
2. The device features robust protection functions, including vacuum system detection and protection, water pressure detection and protection, phase sequence detection and protection, and temperature detection and protection.
3. Install an exhaust gas treatment device.
Equipment Safety Design
1. Detection and Protection of Power Systems
2. Set up vacuum detection and alarm protection functions.
3. Temperature Detection and Alarm Protection
4. Pressure and flow detection, as well as alarm and protection functions for the cooling circulating water system.5. The process gas pipeline is equipped with an anti-cross-contamination device.
Equipment Technical Specifications
Type
Parameter
Sample size
≤φ8 inches (or multiple 2-inch pieces)
Sample heating stage heating temperature
Room temperature to 600℃ ±0.1℃
Ultimate vacuum of the vacuum chamber
≤3×10 -5 Pa
Work background: Vacuum
≤4×10 -4 Pa
Overall device leakage rate
After the pump is stopped for 12 hours, the vacuum level ≤ 10 Pa.
Sample, electrode spacing
5mm to 50mm, continuously adjustable online
Work control pressure
10 Pa to 1500 Pa
Gas control circuit
Configure according to process requirements.
The frequency of the single-frequency power supply
13.56 MHz
The frequency of the dual-frequency power supply
13.56 MHz / 400 KHz
Working conditions
Type
Parameter
Power supply
Three-phase five-wire system, AC 380V
Working environment temperature
10℃ to 40℃
Gas valve supply pressure
0.5 MPa to 0.7 MPa
Inlet pressure of the mass flow controller
0.05 MPa to 0.2 MPa
Cooling water circulation rate
0.6 m 3 /h Water temperature: 18℃～25℃
Total device power
7 kW
Equipment footprint
2.0 m to 2.0 m
Single-chamber and multi-chamber PECVD equipment
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