MOCVD metalorganic chemical vapor deposition equipment
- Product Description
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MOCVD Metal-Organic Chemical Vapor Deposition Equipment
Suitable for epitaxial growth of materials such as GaN and ZnO.
The material transport utilizes an ultra-pure gas delivery system, and the source switching and input are achieved through a multi-port combination valve air-intake technology. Thanks to the extremely small dead volume of the combination valve, the residual amount of source material is minimized, which is conducive to growing materials with steep interfaces.
By employing differential-pressure control technology to regulate the pressure between the bypass and main paths of the combined valve, pressure and concentration fluctuations at the source are significantly reduced, thereby enhancing the repeatability and stability of material growth.
A pipe-inlaid intake nozzle is employed, enabling the reactants to mix and react uniformly on the substrate surface and significantly reducing the occurrence of pre-reactions.
A resistance-type rapid heating and cooling furnace is used.
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